Marco Ameduri (Cornell):
Transplanting curricula and rejuvenating premedical courses at Weill Cornell Medicine-Qatar
Abstract
Rene Coté (Sherbrooke) :
NMR spectra of charge-density-wave states in GaAs/AlGaAs quantum wells and 13C-enriched graphene
Abstract
Joseph Falson (MPI Stuttgart):
A cascade of phase transitions in an orbitally mixed half-filled Landau level
Abstract
Herbert Fertig (Bloomington):
Surface Magnetism as a Probe of Topology and Symmetry in Topological Crystalline Insulators
Topological crystalline insulators (TCI's) are a class of materials which support non-trivial topology in their electronic structure, “protected” by an underlying crystal symmetry. We will discuss how certain aspects of this topology can be uncovered at surfaces of such crystals when they are magnetically doped, and how the degeneracy of groundstates is dependent on both the symmetry of the surface as well as the density of electrons there. Moreover, the same surface may support a very “stiff” ferromagnet or a rather “floppy” one. The nature of the ferromagnet realized is in principle externally controllable, and for different cases it disorders at finite temperature through phase transitions of different universality classes. The type of system realized for a specific set of circumstances can be probed via the unique properties of domain walls which appear when the system is thermally excited.
Rolf Haug (Hannover):
Graphene: Folding and Rings
Abstract
Peter Maksym (Leicester):
Electron optics in bilayer graphene
Abstract
Jochen Mannhart (MPI Stuttgart):
Nanoscale Devices for Dissipationless, Non-superconducting Wires?
Abstract
Frank Marsiglio (Alberta):
Superconductivity: the role of local Coulomb correlations
Daniella Pfannkuche (Hamburg):
Title: TBA
Aron Pinczuk (Columbia):
Title: TBA
Rudolf Roemer (Warwick):
Resolution of the “exponent puzzle” for the Anderson transition in doped semiconductors
The Anderson metal-insulator transition (MIT) has long been studied, but there is still no agreement on its critical exponent ν when comparing experiments and theory. In this work we employ ab initio methods to study the MIT in sulfur-doped silicon (Si:S) when the dopant concentration is increased. We use linear-scaling DFT to study model Si:S systems at realistic concentrations (e.g., a few impurities, in a large simulation cell). From the resulting ab initio Hamiltonian, we build an effective tight-binding Hamiltonian for larger systems close to the critical concentration of the MIT. We characterize the MIT in Si:S via multifractal finite-size scaling and obtain estimates of the phase diagram and ν. Our results suggest a possible resolution of the long-standing “exponent puzzle” due to the interplay between conduction and impurity states.
Giovanni Vignale (Missouri-Columbia):
Negative electronic compressibility and electrically induced charge-density waves in the two-dimensional electron gas
We show that the negative electronic compressibility of two-dimensional electronic systems at sufficiently low density enables the generation of charge-density waves through the application of a uniform force field, provided no current is allowed to flow. The wavelength of the density oscillations is controlled by the magnitude of the (negative) screening length, and their amplitude is proportional to the applied force. Both are electrically tunable.